Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications

被引：89

作者：

Knoops, H. C. M. ^{[1
,2
]}

Baggetto, L. ^{[2
]}

Langereis, E. ^{[2
]}

van de Sanden, M. C. M. ^{[2
]}

Klootwijk, J. H. ^{[3
]}

Roozeboom, F. ^{[2
,4
]}

Niessen, R. A. H. ^{[3
]}

Notten, P. H. L. ^{[2
,3
]}

Kessels, W. M. M. ^{[2
]}

机构：

[1] Mat Innovat Inst M2i, NL-2600 GA Delft, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[4] NXP TSMC Res Ctr, NL-5656 AE Eindhoven, Netherlands

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 12期

关键词：

D O I：

10.1149/1.2988651

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinations of Ta[N(CH(3))(2)](5) precursor with H(2) plasma and TiCl(4) precursor with H(2)-N(2) plasma, respectively. Both the TaN and TiN films had a cubic phase composition with a relatively low resistivity (TaN: 380 mu Omega cm; TiN: 150 mu Omega cm). Dissimilar from the TiN properties, the material properties of the TaN films were found to depend strongly on the plasma exposure time. Preliminary tests on planar substrates were carried out revealing the potential of the TaN and TiN films as Cu and Li diffusion barriers in through-silicon via and silicon-integrated thin-film battery applications, respectively. For the specific films studied, it was found that TiN showed better barrier properties than TaN for both application areas. The TiN films were an effective barrier to Cu diffusion and had no Cu diffusion for anneal temperatures up to 700 degrees C. The TiN films showed low Li intercalation during electrochemical charging and discharging. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2988651] All rights reserved.

引用

页码：G287 / G294

页数：8

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