Quantum dot formation and crystal growth using an atomic nano-mask

被引：4

作者：

Aoyagi, Y ^{[1
]}

Tanaka, S

Hirayama, H

Takeuchi, M

机构：

[1] Tokyo Inst Technol, Tokyo 152, Japan

[2] Hokkaido Univ, Sapporo, Hokkaido 060, Japan

来源：

PHYSICA E | 2001年 / 11卷 / 2-3期

关键词：

quantum dot formation; GaN; atomic nano-mask;

D O I：

10.1016/S1386-9477(01)00181-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The role of anti-surfactant atoms in the form of an atomic nano-mask is discussed with reference to specific examples of quantum dot formation on the surface of a substrate and the termination of dislocations in the growth of GaN. Such examples demonstrate the significant role of additional (doped) atoms for crystal growth. (C) 2001 Published by Elsevier Science B.V.

引用

页码：89 / 93

页数：5

共 5 条

[1] Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces [J].