Stimulated emission from optically pumped GaN quantum dots

被引：73

作者：

Tanaka, S ^{[1
]}

Hirayama, H ^{[1
]}

Aoyagi, Y ^{[1
]}

Narukawa, Y ^{[1
]}

Kawakami, Y ^{[1
]}

Fujita, S ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECT & ENGN,SAKYO KU,KYOTO 60601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.119877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stimulated emission was observed from optically pumped GaN quantum dots in an AlxGa1-xN separate confinement heterostructure fabricated on 6H-SiC(0001) substrate by metal organic chemical vapor deposition. Nanostructural GaN quantum dots, with an average size of similar to 10 nm width, similar to 1-2 nm height, and density of similar to 10(11) cm(-2), were self-assembled on the AlxGa1-xN cladding layer surface. The stimulated emission peak was observed at similar to 3.48 eV, which is similar to 50 meV lower than that of spontaneous emission. The excitation power dependence on the emission intensity clearly indicates threshold pump power density of 0.75 MW/cm(2) for the onset of stimulated emission. (C) 1997 American Institute of Physics.

引用

页码：1299 / 1301

页数：3

共 19 条

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