OPTICAL GAIN OF OPTICALLY PUMPED AL0.1GA0.9N/GAN DOUBLE-HETEROSTRUCTURE AT ROOM-TEMPERATURE

被引：45

作者：

KIM, ST

AMANO, H

AKASAKI, I

KOIDE, N

机构：

[1] TOYODA GOSEI CO LTD,HARUHI MURA,AICHI 452,JAPAN

[2] TAEJON NATL UNIV,DEPT MAT ENGN,DONG GU,TAEJON 300,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the measurement of the gain of an optically pumped Al0.1Ga0.9N/GaN double heterostructure (DH) which was prepared on a sapphire substrate by metalorganic vapor phase epitaxy using an AlN buffer layer. At room temperature, the optical gain of stimulated emission from Al0.1Ga0.9N/GaN DH was measured to be 160 cm-1 at Dumping power density of 200 kW/cm2.

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页码：1535 / 1536

页数：2

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