GROWTH OF SINGLE-CRYSTAL ALXGA1-XN FILMS ON SI SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

被引：22

作者：

HIROSAWA, K ^{[1
]}

HIRAMATSU, K ^{[1
]}

SAWAKI, N ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] MEIJO UNIV, DEPT ELECT & ELECTR ENGN, NAGOYA, AICHI 468, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8A期

关键词：

ALXGA1-XN; SINGLE CRYSTAL; SI SUBSTRATE; MOVPE; RHEED;

D O I：

10.1143/JJAP.32.L1039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxGa1-xN(0001) films with flat surfaces in the composition range of x=0.1-0.4 are successfully grown directly on Si(111) using two-flow-channel metalorganic vapor phase epitaxy (MOVPE). Reflection high-energy electron diffraction (RHEED) patterns are spotty for growth temperatures between 1000-degrees-C and 1150-degrees-C, indicating that the AlxGa1-xN film is a single crystal. In addition, good control of the AlN mole fraction (0.1 to 0.4) is achieved by changing the gas ratio of the group III gas sources.

引用

页码：L1039 / L1042

页数：4

共 9 条

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