GROWTH OF SINGLE CRYSTALLINE GAN FILM ON SI-SUBSTRATE USING 3C-SIC AS AN INTERMEDIATE LAYER

MOVPE Growth of GaN films on Si (111) substrates has been studied. Thin 3C-SiC is found to be an effective intermediate layer for growth of single crystalline GaN films with flat surfaces. Cathodoluminescence measurements show only strong near band-edge emission at RT from GaN films on Si substrates using a 3C-SiC intermediate layer. The epitaxial relationship between the GaN film and a Si substrate covered with a 3C-SiC layer is as follows: (0001)GaN parallel-to (111)Si and [1120BAR]GaN parallel-to [110BAR]Si.