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LOW-TEMPERATURE AND SELECTIVE GROWTH OF BETA-SIC USING THE SIH2CL2/I-C4H10/HCL/H-2 GAS SYSTEM

被引：12
作者：
OHSHITA, Y
机构：
[1] Microelectronics Research Laboratories, NEC Corporation, Miyamae-ku Kawasaki 213, 1-1
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 06期
关键词：
D O I：
10.1063/1.103611
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
β-SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i-C4H 10/H2/HCl gas system. Stoichiometric β-SiC films are obtained with high growth rate at a low temperature of 900°C. Highly (111) oriented β-SiC polycrystal is grown on a Si(111) substrate. Moreover, using the above-mentioned gas system, β-SiC selective growth is attained on a Si substrate, with no nucleation on the SiO2 area. This letter discusses the i-C4H10 effects and selective growth condition.
引用
收藏
页码：605 / 607
页数：3
相关论文
共 7 条
[1]   CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].
ADDAMIANO, A ;
KLEIN, PH .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294
[2]   BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].
ADDAMIANO, A ;
SPRAGUE, JA .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527
[3]   SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY. [J].
Ishitani, Akihiko ;
Kitajima, Hiroshi ;
Tanno, Kohetsu ;
Tsuya, Hideki .
Microelectronic Engineering, 1986, 4 (01) :3-33
[4]   SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J].
JOYCE, BD ;
BALDREY, JA .
NATURE, 1962, 195 (4840) :485-&
[5]   PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].
NISHINO, S ;
POWELL, JA ;
WILL, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462
[6]   LOW-TEMPERATURE AND SELECTIVE GROWTH OF BETA-SIC USING THE SIH2CL2 C3H8 H2 HCL-GAS SYSTEM [J].
OHSHITA, Y ;
ISHITANI, A .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4535-4537
[7]   EPITAXIAL-GROWTH OF BETA-SIC SINGLE-CRYSTALS BY SUCCESSIVE 2-STEP CVD [J].
SUZUKI, A ;
FURUKAWA, K ;
HIGASHIGAKI, Y ;
HARADA, S ;
NAKAJIMA, S ;
INOGUCHI, T .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :287-290
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