CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] THE FORMATION OF BETA-SIC ON SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 669 - 683

[3] GROWTH MORPHOLOGY AND CRYSTALLOGRAPHIC ORIENTATION OF BETA-SIC FILMS FORMED BY CHEMICAL CONVERSION [J]. THIN SOLID FILMS, 1970, 5 (03) : 145 - &

[4] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[5] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] Stull DR, 1971, JANAF THERMOCHEMICAL, V37

[8] Treffers R., 1974, Astrophysical Journal, V188, P545, DOI 10.1086/152746

[9] VOLD C, COMMUNICATION

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] THE FORMATION OF BETA-SIC ON SI [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 669 - 683

[3] GROWTH MORPHOLOGY AND CRYSTALLOGRAPHIC ORIENTATION OF BETA-SIC FILMS FORMED BY CHEMICAL CONVERSION [J]. THIN SOLID FILMS, 1970, 5 (03) : 145 - &

[4] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[5] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] Stull DR, 1971, JANAF THERMOCHEMICAL, V37

[8] Treffers R., 1974, Astrophysical Journal, V188, P545, DOI 10.1086/152746

[9] VOLD C, COMMUNICATION