GROWTH OF AIN/GAN LAYERED STRUCTURES BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：104

作者：

SITAR, Z ^{[1
]}

PAISLEY, MJ ^{[1
]}

YAN, B ^{[1
]}

RUAN, J ^{[1
]}

CHOYKE, WJ ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] UNIV PITTSBURGH,DEPT PHYS,PITTSBURGH,PA 15260

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：316 / 322

页数：7

共 14 条

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