Free-standing semiconductor micro- and nano-objects

被引:22
作者
Schmidt, OG [1 ]
Deneke, C [1 ]
Schmarje, N [1 ]
Müller, C [1 ]
Jin-Phillipp, NY [1 ]
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 19卷 / 1-2期
关键词
semiconductor; InGaAs/GaAs tube; bilayer thickness;
D O I
10.1016/S0928-4931(01)00428-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Strained semiconductor bilayers are released from their substrate and formed into free-standing micro- and nano-objects (MNOs) on semiconductor substrates. We fabricate ultrathin SiGe ring-like vertical membranes and investigated their formation process. The rings experience excellent circular shape and can move to a different position on the substrate surface without breaking. The diameter of In0.33Ga0.67As/GaAs tubes is systematically studied as a function of the bilayer thickness. An entirely free-standing InGaAs/GaAs tube is created. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:393 / 396
页数:4
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