Strain-driven self-positioning of micromachined structures

被引：123

作者：

Vaccaro, PO ^{[1
]}

Kubota, K ^{[1
]}

Aida, T ^{[1
]}

机构：

[1] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 19期

关键词：

D O I：

10.1063/1.1371525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We introduce a method to make self-positioned micromachined structures by using the strain in a pair of lattice-mismatched epitaxial layers. This method allows the fabrication of simple and robust hinges for movable parts, and it can be applied to any pair of lattice-mismatched epitaxial layers, in semiconductors or metals. As an application example, a standing mirror was fabricated. A multilayer structure including an AlGaAs/GaAs dielectric mirror and an InGaAs strained layer was grown by molecular-beam epitaxy on a GaAs substrate. After releasing the multilayer structure from the substrate by selective etching, it moved to its final position powered by the strain release in the InGaAs layer. (C) 2001 American Institute of Physics.

引用

页码：2852 / 2854

页数：3

共 9 条

[1]

BHATTACHARYA P, 1993, EMIS DATAREVIEWS SER, V8, P9

[2] ELASTIC-CONSTANTS OF GAAS FROM 2 K TO 320 K [J].