Film structure and ferroelectric properties of in situ grown SrBi2Ta2O9 films

被引：20

作者：

Dinu, R ^{[1
]}

Dinescu, M ^{[1
]}

Pedarnig, JD ^{[1
]}

Gunasekaran, RA ^{[1
]}

Bäuerle, D ^{[1
]}

Bauer-Gogonea, S ^{[1
]}

Bauer, S ^{[1
]}

机构：

[1] Johannes Kepler Univ, Dept Appl Phys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 01期

关键词：

D O I：

10.1007/s003390050971

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ferroelectric SrBi2Ta2O9 (SBT) films were grown by pulsed-laser deposition (PLD) at different substrate temperatures and fluences. A correlation between film structure and ferroelectric properties is established. The dielectric function epsilon' Of thin SET films shows a Curie-Weiss behavior well below the peak temperature T-max and relaxor-like behavior in the vicinity of T-max. Domain walls have a strong influence on the dielectric and ferroelectric properties and on the polarization fatigue of SET films below 100 degrees C. The formation of ferroelectric phases is favored at lower substrate temperatures by incorporating Bi2O3 template layers into the structure.

引用

页码：55 / 61

页数：7

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