Control of epitaxial growth for SrBi2Ta2O9 thin films

被引：46

作者：

Cho, JH ^{[1
]}

Bang, SH

Son, JY

Jia, QX

机构：

[1] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea

[2] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea

[3] Univ Calif Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 06期

关键词：

D O I：

10.1063/1.120840

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi2Ta2O9 thin film grown on (100) LaAlO3 and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO3 single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi2Ta2O9 thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi2Ta2O9 films are similar to 3.9 and similar to 3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi2Ta2O9 thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties. (C) 1998 American Institute of Physics.

引用

页码：665 / 667

页数：3

共 12 条

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