Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

被引：62

作者：

Maximov, MV ^{[1
]}

Tsatsul'nikov, AF

Volovik, BV

Bedarev, DA

Egorov, AY

Zhukov, AE

Kovsh, AR

Bert, NA

Ustinov, VM

Kop'ev, PS

Alferov, ZI

Ledentsov, NN

Bimberg, D

Soshnikov, IP

Werner, P

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys Tech, D-10623 Berlin, Germany

[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 16期

关键词：

D O I：

10.1063/1.125010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 mu m. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (similar to 320-400 degrees C). (C) 1999 American Institute of Physics. [S0003-6951(99)00242-9].

引用

页码：2347 / 2349

页数：3

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