1.3μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

被引：112

作者：

Shernyakov, YM

Bedarev, DA

Kondrat'eva, EY

Kop'ev, PS

Kovsh, AR

Maleev, NA

Maximov, MV

Mikhrin, SS

Tsatsul'nikov, AF

Ustinov, VM

Volovik, BV

Zhukov, AE

Alferov, ZI

Ledentsov, NN

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 11期

关键词：

D O I：

10.1049/el:19990596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold current density (J(th) = 65A/cm(2)) operation near 1.3 mu m at room temperature (RT) is realised for lasers using InAs/ InGaAs/GaAs quantum dots (QDs). The lasing occurs via the QD ground state: for cavity length L > 1mm. The differential efficiency is 40% and internal losses are 1.5cm(-1). The characteristic temperature near RT is 160K.

引用

页码：898 / 900

页数：3

共 11 条

[1] ANALYSIS OF T-0 IN 1.3-MU-M MULTI-QUANTUM-WELL AND BULK ACTIVE LASERS
ACKERMAN, DA
MORTON, PA
SHTENGEL, GE
HYBERTSEN, MS
KAZARINOV, RF
TANBUNEK, T
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (20) : 2613 - 2615
[2] BIMBERG D, 1999, QUANTUM DOT HETEROST, P328
[3] 1.3 μm room-temperature GaAs-based quantum-dot laser
Huffaker, DL
Park, G
Zou, Z
Shchekin, OB
Deppe, DG
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2564 - 2566
[4] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS
KIRSTAEDTER, N
LEDENTSOV, NN
GRUNDMANN, M
BIMBERG, D
USTINOV, VM
RUVIMOV, SS
MAXIMOV, MV
KOPEV, PS
ALFEROV, ZI
RICHTER, U
WERNER, P
GOSELE, U
HEYDENREICH, J
[J]. ELECTRONICS LETTERS, 1994, 30 (17) : 1416 - 1417
[5] LEDENTSOV NN, 1994, SEMICONDUCTORS+, V28, P832
[6] 1.3 mu m photoluminescence from InGaAs quantum dots on GaAs
Mirin, RP
Ibbetson, JP
Nishi, K
Gossard, AC
Bowers, JE
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3795 - 3797
[7] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M
MUKAI, K
OHTSUKA, N
SUGAWARA, M
YAMAZAKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1710 - L1712
[8] Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier
Pan, JW
Chau, KG
Chyi, JI
Tu, YK
Liaw, JW
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (17) : 2090 - 2092
[9] Ustinov VM, 1997, J CRYST GROWTH, V175, P689, DOI 10.1016/S0022-0248(96)01021-4
[10] USTINOV VM, 1999, APPL PHYS LETT, V74

← 1 2 →