Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

被引：13

作者：

Pan, JW ^{[1
]}

Chau, KG ^{[1
]}

Chyi, JI ^{[1
]}

Tu, YK ^{[1
]}

Liaw, JW ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The slope efficiency and threshold current density of 1.3 mu m AlGaInAs/InP lasers with AlInAs-AlGaInAs multiquantum barrier (MQB) are experimentally studied and compared with the conventional step-index separate confinement heterostructure (SCH) laser. With the MQBs at the guiding layers, the characteristic temperature can be improved as much as 10 K as compared with the conventional SCH laser. This is attributed to the suppression of electron and hole leakage currents. (C) 1998 American Institute of Physics.

引用

收藏

页码：2090 / 2092

页数：3

相关论文

共 9 条

[1] EFFECT OF THERMIONIC ELECTRON-EMISSION FROM THE ACTIVE LAYER ON THE INTERNAL QUANTUM EFFICIENCY OF INGAASP LASERS OPERATING AT 1.3 MU-M [J].

ANDREKSON, PA ;

KAZARINOV, RF ;

OLSSON, NA ;

TANBUNEK, T ;

LOGAN, RA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :219-221

[2] EFFECT OF BARRIER RECOMBINATION ON THE HIGH-TEMPERATURE PERFORMANCE OF QUATERNARY MULTIQUANTUM-WELL LASERS [J].

BERNUSSI, AA ;

TEMKIN, H ;

COBLENZ, DL ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1995, 66 (01) :67-69

[3] CARRIER CONFINEMENT BY MULTIPLE-QUANTUM BARRIERS IN 1.55-MU-M STRAINED GAINAS/ALGAINAS QUANTUM-WELL LASERS [J].

FUKUSHIMA, T ;

SHIMIZU, H ;

NISHIKATA, K ;

HIRAYAMA, Y ;

IRIKAWA, M .

APPLIED PHYSICS LETTERS, 1995, 66 (16) :2025-2027

[4] ENHANCED CARRIER CONFINEMENT EFFECT BY THE MULTIQUANTUM BARRIER IN 660 NM GAINP/ALINP VISIBLE LASERS [J].

KISHINO, K ;

KIKUCHI, A ;

KANEKO, Y ;

NOMURA, I .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1822-1824

[5] LASING CHARACTERISTICS UNDER HIGH-TEMPERATURE OPERATION OF 1.55-MU-M STRAINED INGAASP/INGAALAS MQW LASER WITH INALAS ELECTRON STOPPER LAYER [J].

MURAI, H ;

MATSUI, Y ;

OGAWA, Y ;

KUNII, T .

ELECTRONICS LETTERS, 1995, 31 (24) :2105-2107

[6] DOMINANT MECHANISMS FOR THE TEMPERATURE SENSITIVITY OF 1.3 MU-M INP-BASED STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS [J].

SEKI, S ;

OOHASI, H ;

SUGIURA, H ;

HIRONO, T ;

YOKOYAMA, K .

APPLIED PHYSICS LETTERS, 1995, 67 (08) :1054-1056

[7] TEMPERATURE-DEPENDENCE OF GAAS/ALGAAS MULTIQUANTUM BARRIER LASERS [J].

TAKAGI, T ;

IGA, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (12) :1322-1324

[8] 0.98-MU-M INGAAS-INGAP STRAINED-QUANTUM-WELL LASERS WITH GAAS-INGAP SUPERLATTICE OPTICAL CONFINEMENT LAYER [J].

USAMI, M ;

MATSUSHIMA, Y ;

TAKAHASHI, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :244-249

[9] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS [J].

ZAH, CE ;

BHAT, R ;

PATHAK, BN ;

FAVIRE, F ;

LIN, W ;

WANG, MC ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, MA ;

LEE, TP ;

WANG, Z ;

DARBY, D ;

FLANDERS, D ;

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :511-523