ENHANCED CARRIER CONFINEMENT EFFECT BY THE MULTIQUANTUM BARRIER IN 660 NM GAINP/ALINP VISIBLE LASERS

被引：64

作者：

KISHINO, K

KIKUCHI, A

KANEKO, Y

NOMURA, I

机构：

[1] Department of Electrical and Electronics Engineering, Sophia University, Chiyoda-ku

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 17期

关键词：

D O I：

10.1063/1.105099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiquantum barriers (MQBs) were introduced into 660 nm GaInP/AlInP lasers with superlattice confinement (SLC) layers, resulting in drastic improvements in lasing performance. Lowest threshold current densities (840 A/cm2) and highest room-temperature values for T0 (167 K) ever reported for 660-680 nm range lasers with bulk active layers were achieved. High-temperature characteristics of the threshold current densities were measured in order to investigate the enhanced carrier confinement effect of MQBs and to estimate the excess nonradiative recombination current component. From the temperature dependence on the excess current density, the activation energies E0 of nonradiative processes were estimated to be 0.45 eV for MQB-SLC lasers, and 0.26 eV for conventional SLC lasers without MQB. The increase of E0 demonstrates the enhanced heterobarrier effect by MQBs.

引用

页码：1822 / 1824

页数：3

共 19 条

[1] DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].