ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION OF 671-NM WAVELENGTH GAINASP/ALGAAS VSIS LASERS

被引：5

作者：

CHONG, TH

KISHINO, K

机构：

[1] Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 02期

关键词：

Aluminum Gallium Arsenide - Continuous Wave Lasers - Gallium Indium Arsenide Phosphide - Red Emitting Lasers - Threshold Current;

D O I：

10.1109/68.47057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first successful room temperature continuous wave (CW) operation of a GalnAsP/AlGaAs laser grown by an LPE technique and emitting at a wavelength of 671 nm was achieved, with a V-channeled substrate inner stripe (VSIS) structure used to obtain current confinement and transverse mode control. The threshold current and lasing wavelength were 77 mA and 671.1 nm, respectively, and the temperature dependence of the threshold current was such that the characteristic temperature was 75K. © 1990 IEEE

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页码：91 / 93

页数：3

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