ROOM-TEMPERATURE CW OPERATION OF INGAPAS GAALAS VISIBLE-LIGHT DOUBLE HETEROJUNCTION LASERS

被引：6

作者：

KANEIWA, S

TAKIGUCHI, H

HAYAKAWA, T

YAMAMOTO, S

HAYASHI, H

YANO, S

HIJIKATA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 457

页数：3

共 12 条

[1] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :67-74

[2]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[3] VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS [J].

FUJIMOTO, A ;

YASUDA, H ;

SHIMURA, M ;

YAMASHITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L488-L490

[4] LIQUID-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP1-YASY ON GAAS SUBSTRATES [J].

KANEIWA, S ;

TAKENAKA, T ;

YANO, S ;

HIJIKATA, T .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :498-504

[5] VISIBLE GAAS0.7P0.3 CW HETEROJUNCTION LASERS [J].

KRESSEL, H ;

OLSEN, GH ;

NUESE, CJ .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :249-251

[6] FABRICATION AND VISIBLE-LIGHT-EMISSION CHARACTERISTICS OF ROOM-TEMPERATURE-OPERATED INGAPAS DH DIODE-LASERS GROWN ON GAAS SUBSTRATES [J].

MUKAI, S ;

YAJIMA, H ;

SHIMADA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L729-L732

[7]

OHTA I, 1982, I PHYS C SER, V63, P59

[8] CALCULATION OF MISCIBILITY GAP IN QUATERNARY INGAPAS WITH STRICTLY REGULAR SOLUTION APPROXIMATION [J].

ONABE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :797-798

[9] MISCIBILITY GAPS IN QUATERNARY-III-V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :194-202

[10] ROOM-TEMPERATURE CW OPERATION OF INGAASP/INGAP LASERS AT 727 NM GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE EPITAXY [J].

WAKAO, K ;

NISHI, H ;

KUSUNOKI, T ;

ISOZUMI, S ;

OHSAKA, S .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1035-1037

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