Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systems

被引：4

作者：

Streiter, R ^{[1
]}

Wolf, H

Zhu, Z

Xiao, X

Gessner, T

机构：

[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany

[2] Fraunhofer Inst Reliabil & Microintegrat, Dept Micro Devices & Equipment, D-09126 Chemnitz, Germany

[3] Fudan Univ, Dept Elect Engn, Shanghai 2000433, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 60卷 / 1-2期

关键词：

interconnects; simulation; Joule heating; electromigration; copper; low-k;

D O I：

10.1016/S0167-9317(01)00579-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal and the electrical behavior of interconnects for the 100 mn and the 50 nm technology node have been investigated with regard to the application of advanced dielectric materials. Their low thermal conductivity causes different design limitations for dc and ac carrying interconnects. The maximum possible current density of dc lines is determined by a self-consistent approach considering both Joule heating and electromigration (EM). The temperature of signal lines is related to the position-dependent current density. Temperature increase of less than 20 K is found near the front end of the interconnects. At high frequencies transient electrical behavior is strongly influenced by parasitic line capacitance and inductance. The effect on line temperature is simulated. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 49

页数：11

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