Low-voltage 0.1 μm organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography

被引:71
作者
Rogers, JA [1 ]
Dodabalapur, A [1 ]
Bao, ZN [1 ]
Katz, HE [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.124581
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter describes the combined use of a form of near-field photolithography that relies on a conformable phase masks with microcontact printing and shadow masking for low-cost fabrication of organic transistors and simple complementary inverter circuits with critical dimensions of similar to 0.1 mu m. The good performance of the devices and their low-voltage operation make them and the fabrication procedures potentially attractive for many applications. (C) 1999 American Institute of Physics. [S0003-6951(99)00833-5].
引用
收藏
页码:1010 / 1012
页数:3
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