Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure

被引：42

作者：

Neogi, A ^{[1
]}

Mozume, T

Yoshida, H

Wada, O

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

[2] New Energy & Ind Res Dev Org, Tokyo 170, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 06期

关键词：

optical communication; optical switches; quantum-well devices; semiconductor materials; ultrafast optics;

D O I：

10.1109/68.766767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first observation of intersubband absorption at 1.3 mu m in a coupled InGaGs-AlAsSb double-quantum-well structure lattice matched to InP substrate, The novel structure exhibits intersubband transitions concurrently at 1.3 and 1.55 mu m due to the strong coupling of the intersubband states of the adjacent wells. A transient analysis of optical response in the multilevel conduction subband states for the designed structure indicates ultrafast optical switching behavior with a subpicosecond response.

引用

页码：632 / 634

页数：3

共 9 条

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