Highly stable hydrogenated amorphous silicon germanium solar cells

被引：17

作者：

Gordijn, A ^{[1
]}

Zambrano, RJ ^{[1
]}

Rath, JK ^{[1
]}

Schropp, REI ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 05期

关键词：

amorphous silicon; photovoltaics; solar cells;

D O I：

10.1109/16.998611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article shows an optimized a-SiGe:H material that behaves highly stable in solar cells. The a-SiGe:H material is deposited by PECVD with high hydrogen dilution, near the microcrystalline deposition regime. We made various a-SiGe:H single solar cells to optimize the device design. The band gap in the central part of the cell is 1.53 eV. The hydrogen bonding configuration in the a-SiGe:H material suggests the presence of voids, however, the material has no noticeable sign of crystallinity. Light soaking experiments showed that the present single junction a-SiGe:H solar cells are highly stable. After one hour of light soaking, a slight improvement in fill factor is observed and an improvement in carrier collection in the red region is evident from spectral response. The stable a-SiGe:H material is incorporated as the bottom cell of a-Si:H/a-SiGe:H tandem solar cells. Unlike the single junction cell, this tandem cell slightly degrades under light soaking. This is solely the result of degradation of the a-Si:H top layer.

引用

页码：949 / 952

页数：4

共 13 条

[1]

[Anonymous], 1998, Amorphous and Microcrystalline Silicon Solar Cells: modeling, materials and device technology

[2] MICROSTRUCTURE AND THE LIGHT-INDUCED METASTABILITY IN HYDROGENATED AMORPHOUS-SILICON [J].

BHATTACHARYA, E ;

MAHAN, AH .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1587-1589

[3]

Cabarrocas PRI, 1998, MATER RES SOC SYMP P, V507, P855

[4] A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells [J].

Carlson, DE ;

Chen, LF ;

Ganguly, G ;

Lin, G ;

Middya, AR ;

Crandall, RS ;

Reedy, R .

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 :395-400

[5]

FOLSCH J, 1997, 14 EPVSEC, P601

[6] DEFECT CHARACTERIZATION IN AMORPHOUS-SILICON BASED SOLAR-CELLS BY SUBBAND-GAP SPECTROSCOPY WITH CONSTANT PHOTOCURRENT MEASUREMENTS [J].

FRAMMELSBERGER, W ;

RUBEL, H ;

LECHNER, P ;

GEYER, R ;

KNIFFLER, N .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2660-2662

[7]

GODET C, 1996, J NONCRYST SOLIDS, V198, P449

[8]

MUNYEME G, COMMUNICATION

[9] High-deposition rate a-Si:H n-i-p solar cells grown by HWCVD [J].

Nelson, BP ;

Iwaniczko, E ;

Mahan, AH ;

Wang, Q ;

Xu, YQ ;

Crandall, RS ;

Branz, HM .

THIN SOLID FILMS, 2001, 395 (1-2) :292-297

[10]

RATH JK, 1996, PHILOS MAG B, V71, P821

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