A comparison of the degradation and annealing kinetics in amorphous silicon and amorphous silicon-germanium solar cells

被引：6

作者：

Carlson, DE ^{[1
]}

Chen, LF ^{[1
]}

Ganguly, G ^{[1
]}

Lin, G ^{[1
]}

Middya, AR ^{[1
]}

Crandall, RS ^{[1
]}

Reedy, R ^{[1
]}

机构：

[1] Solarex, Toano, VA 23168 USA

来源：

AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷

关键词：

D O I：

10.1557/PROC-557-395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in our a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.

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页码：395 / 400

页数：6

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