FGMOS dosimetry: Design and implementation

被引：34

作者：

Martin, MN

Roth, DR

Garrison-Darrin, A

McNulty, PJ

Andreou, AG

机构：

[1] Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA

[2] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA

[3] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期

关键词：

dosimetry; floating-gate; radiation effects;

D O I：

10.1109/23.983171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented.

引用

页码：2050 / 2055

页数：6