Modeling and electrical analysis of seamless high off-chip connectivity (SHOCC) interconnects

被引:16
作者
Afonso, S [1 ]
Schaper, LW
Parkerson, JP
Brown, WD
Ang, SS
Naseem, HA
机构
[1] Honeywell Inc, Microswitch, Richardson, TX 75081 USA
[2] Univ Arkansas, High Dens Elect Ctr, Fayetteville, AR 72701 USA
[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 1999年 / 22卷 / 03期
关键词
electrical performance; flip chip; lossy transmission lines; modeling; off-chip; on-chip; RC delay; SHOCC;
D O I
10.1109/6040.784478
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scaling down on-chip interconnect cross-sectional dimensions results not only in higher circuit wiring density, but also in the long lossy line problem, wherein the long lines become highly resistive and have unacceptable delays. One possible solution to the problem of long lossy lines is to transfer these fines off-chip using seamless high off-chip connectivity (SHOCC) technology, In this work, we modeled and studied the electrical performance of SHOCC signal lines, The performance of SHOCC interconnects was compared with that of typical on-chip interconnects, Modeling and simulation results, along with recommendations with regards to driver sizes and the type of interconnect that should be used, are presented.
引用
收藏
页码:309 / 320
页数:12
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