Phonon confinement in silicon nanowires synthesized by laser ablation

被引：12

作者：

Fukata, N

Oshima, T

Okada, N

Kizuka, T

Tsurui, T

Ito, S

Murakami, K

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Special Res Project Nanosci, Tsukuba, Ibaraki 3058573, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[4] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan

[5] JST, PREST, Tsukuba, Ibaraki 3058573, Japan

[6] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

nanowire; phonon confinement; silicon;

D O I：

10.1016/j.physb.2005.12.216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The phonon confinement effect was investigated by Raman measurements for Si nanowires (SiNWs) synthesized by laser ablation of a Si target with nickel (Ni) catalyst and for SiNWs thermally oxidized at 700-1000 degrees C. The Si optical phonon peak for SiNWs, unlike that for bulk Si, showed a downshift and an asymmetric broadening. Thermal oxidation caused a further downshift and broadening. These phenomena can be explained by the phonon confinement effect due to the decrease in the diameter of the Si core of the SiNWs. It was additionally found that excess oxidation caused an upshift of the optical phonon peak due to compressive stress. (c) 2006 Published by Elsevier B.V.

引用

页码：864 / 867

页数：4

共 14 条

[1] Confined phonons in Si nanowires [J].