Raman spectroscopy of silicon nanowires

被引:327
作者
Piscanec, S [1 ]
Cantoro, M
Ferrari, AC
Zapien, JA
Lifshitz, Y
Lee, ST
Hofmann, S
Robertson, J
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
关键词
D O I
10.1103/PhysRevB.68.241312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confinement typical of quantum wires.
引用
收藏
页数:4
相关论文
共 25 条
  • [1] ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON
    BALKANSKI, M
    WALLIS, RF
    HARO, E
    [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1928 - 1934
  • [2] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [3] INTERACTION BETWEEN ELECTRONIC AND VIBRONIC RAMAN-SCATTERING IN HEAVILY DOPED SILICON
    CERDEIRA, F
    FJELDLY, TA
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (03) : 325 - 328
  • [4] PHONON POPULATIONS BY NANOSECOND-PULSED RAMAN-SCATTERING IN SI
    COMPAAN, A
    LEE, MC
    TROTT, GJ
    [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6731 - 6741
  • [5] Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    Cui, Y
    Lieber, CM
    [J]. SCIENCE, 2001, 291 (5505) : 851 - 853
  • [6] EKLUND PC, 2002, P 18 INT C RAM SPECT
  • [7] FERRARI AC, 2003, P IWEPNM 2003 AIP ME
  • [8] Laser-induced Fano resonance scattering in silicon nanowires
    Gupta, R
    Xiong, Q
    Adu, CK
    Kim, UJ
    Eklund, PC
    [J]. NANO LETTERS, 2003, 3 (05) : 627 - 631
  • [9] Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition
    Hofmann, S
    Ducati, C
    Neill, RJ
    Piscanec, S
    Ferrari, AC
    Geng, J
    Dunin-Borkowski, RE
    Robertson, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (09) : 6005 - 6012
  • [10] OPTICAL FUNCTIONS OF SILICON BETWEEN 1.7 AND 4.7 EV AT ELEVATED-TEMPERATURES
    JELLISON, GE
    MODINE, FA
    [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7466 - 7472