Raman spectroscopy of silicon nanowires

被引：327

作者：

Piscanec, S ^{[1
]}

Cantoro, M

Ferrari, AC

Zapien, JA

Lifshitz, Y

Lee, ST

Hofmann, S

Robertson, J

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.68.241312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confinement typical of quantum wires.

引用

页数：4

共 25 条

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