Band parameters and electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wells

被引：71

作者：

Fan, WJ ^{[1
]}

Xia, JB ^{[1
]}

Agus, PA ^{[1
]}

Tan, ST ^{[1
]}

Yu, SF ^{[1
]}

Sun, XW ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2150266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band structures of wurtzite ZnO are calculated by the empirical pseudopotential method (EPM). The eight parameters of the Zn and O atomic pseudopotential form factors are obtained with the formula of Schluter [Phys. Rev. B 12, 4200 (1975)]. The band parameters are extracted by using a k center dot p Hamiltonian to fit the EPM results. The calculated band-edge energies (E-g, E-A, E-B, and E-C) at the Gamma point are in good agreement with the experimental results. Based on the band parameters obtained, valence subbands of wurtzite ZnO/MgxZn1-xO tensile-strained quantum wells with different well widths and Mg compositions are calculated by the six-band k center dot p method.

引用

页数：4

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