No Graphene Etching in Purified Hydrogen

被引：80

作者：

Choubak, Saman ^{[1
,2
]}

Biron, Maxime ^{[1
,2
]}

Levesque, Pierre L. ^{[3
,4
]}

Martel, Richard ^{[3
,4
]}

Desjardins, Patrick ^{[1
,2
]}

机构：

[1] Ecole Polytech, RQMP, Montreal, PQ H3C 2A7, Canada

[2] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 2A7, Canada

[3] Univ Montreal, RQMP, Montreal, PQ H3C 3J7, Canada

[4] Univ Montreal, Dept Chim, Montreal, PQ H3C 3J7, Canada

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2013年 / 4卷 / 07期

基金：

加拿大自然科学与工程研究理事会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH; FILMS;

D O I：

10.1021/jz400400u

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A systematic study has been conducted to investigate the role of hydrogen in the etching reaction of graphene films grown on copper foils. The results at 825 degrees C and 500 mTorr showed no evidence of graphene etching by purified ultrahigh purity (UHP)-grade hydrogen, whereas graphene films exposed to unpurified UHP-grade hydrogen were considerably etched due to the presence of oxygen or other oxidizing impurities. This finding reveals not only the major impact of oxidizing impurities in the graphene etching reaction, but also entails understanding and controlling the graphene chemical vapor deposition mechanism on copper substrates.

引用

页码：1100 / 1103

页数：4

共 30 条

[1] Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene [J].

Ago, Hiroki ;

Ogawa, Yui ;

Tsuji, Masaharu ;

Mizuno, Seigi ;

Hibino, Hiroki .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2012, 3 (16) :2228-2236

[2]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[3] MOLECULAR-BEAM STUDY OF APPARENT ACTIVATION BARRIER ASSOCIATED WITH ADSORPTION AND DESORPTION OF HYDROGEN ON COPPER [J].

BALOOCH, M ;

CARDILLO, MJ ;

MILLER, DR ;

STICKNEY, RE .

SURFACE SCIENCE, 1974, 46 (02) :358-392

[4] Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].

Bhaviripudi, Sreekar ;

Jia, Xiaoting ;

Dresselhaus, Mildred S. ;

Kong, Jing .

NANO LETTERS, 2010, 10 (10) :4128-4133

[5]

Bond G.C., 2006, Catalytic Science Series, V6

[6] Characterization of amorphous and nanocrystalline carbon films [J].

Chu, PK ;

Li, LH .

MATERIALS CHEMISTRY AND PHYSICS, 2006, 96 (2-3) :253-277

[7] Dynamic Characterization of Graphene Growth and Etching by Oxygen on Ru(0001) by Photoemission Electron Microscopy [J].

Cui, Yi ;

Fu, Qiang ;

Zhang, Hui ;

Tan, Dali ;

Bao, Xinhe .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (47) :20365-20370

[8] Epitaxial Graphene on Cu(111) [J].

Gao, Li ;

Guest, Jeffrey R. ;

Guisinger, Nathan P. .

NANO LETTERS, 2010, 10 (09) :3512-3516

[9] Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition [J].

Gao, Libo ;

Ren, Wencai ;

Zhao, Jinping ;

Ma, Lai-Peng ;

Chen, Zongping ;

Cheng, Hui-Ming .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[10] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

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