Dynamic Characterization of Graphene Growth and Etching by Oxygen on Ru(0001) by Photoemission Electron Microscopy

被引：45

作者：

Cui, Yi ^{[1
]}

Fu, Qiang ^{[1
]}

Zhang, Hui ^{[1
]}

Tan, Dali ^{[1
]}

Bao, Xinhe ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Laboratoty Catalysis, Dalian Inst Chem Phys, Dalian 116023, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2009年 / 113卷 / 47期

基金：

中国国家自然科学基金;

关键词：

GRAPHITE MONOLAYER; SURFACE-REACTIONS; INTERCALATION; KINETICS; PT(111); FILMS; DISPERSIONS; OXIDATION; NI(111); ATOMS;

D O I：

10.1021/jp907949a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial growth of graphene on Ru(0001) was investigated by photoemission electron microscopy (PEEM) and scanning tunneling microscopy (STM). By connecting the mesoscopic length scale of PEEM and the microscopic length scale of STM, we show that graphene overlayers with sizes ranging from nanometers to sub-millimeters have been prepared on Ru(0001) in a well-controllable fashion. From the systematic investigation of different methods to grow graphene on Ru(0001), the dominant factors in the graphene growth process have been revealed, which enables to grow graphene on transition metal surfaces in a controllable way. Additionally, the dynamic process of graphene etching by oxygen at temperatures between 600-1000 K Was Studied by in situ PEEM. The reaction kinetics results show that decrease in the graphene overlayers size is linearly dependent on the reaction time, indicating a reaction-controlled process. The catalytic effect of Ru substrate facilitates graphene oxidation, which shows relatively low activation energy of 27.2 kJ/mol.

引用

页码：20365 / 20370

页数：6

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