Deposition of C-N films by reactive laser ablation

被引：49

作者：

DAnna, E

Luches, A

Perrone, A

Acquaviva, S

Alexandrescu, R

Mihailescu, IN

Zemek, J

Majni, G

机构：

[1] UNIV LECCE, DEPT PHYS, INFM, I-73100 LECCE, ITALY

[2] INST ATOM PHYS, MAGURELE 76900, BUCHAREST, ROMANIA

[3] ACAD SCI CZECH REPUBL, INST PHYS, PRAGUE, CZECH REPUBLIC

[4] UNIV ANCONA, INFM, DEPT MAT & EARTH SCI, I-60131 ANCONA, ITALY

来源：

APPLIED SURFACE SCIENCE | 1996年 / 106卷

关键词：

D O I：

10.1016/S0169-4332(96)00374-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A study of the characteristics of films deposited at room temperature on Si and KBr substrates by XeCl laser ablation of graphite in low pressure (0.25-2.5 mbar) N-2 and NH3 is presented. Hard films, with a very high electrical resistivity were obtained. N/C atomic ratios up to 0.6 were calculated from backscattering measurements. Different diagnostic techniques (XPS, IR absorption spectroscopy, etc.) prove the formation of carbon nitride with a prevalent graphitic structure.

引用

收藏

页码：126 / 131

页数：6

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