STRUCTURAL STUDIES OF REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS

被引：72

作者：

KUMAR, S

TANSLEY, TL

机构：

[1] Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University, Sydney

来源：

THIN SOLID FILMS | 1995年 / 256卷 / 1-2期

关键词：

INFRARED SPECTROSCOPY; NITRIDES; RAMAN SCATTERING; SPUTTERING; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0040-6090(94)06294-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of reactively sputtered carbon nitride thin films has been investigated using infrared, Raman and X-ray photoelectron spectroscopies. The presence of infrared and Raman active C-N vibrational bands and the chemical shifts of the C Is and N Is photoelectron levels observed in our films reveal that the nitrogen atoms incorporated in the films are chemically bonded to the carbon atoms.

引用

页码：44 / 47

页数：4

共 14 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (04): : 1153 - 1159
[7] GROWTH AND STRUCTURE OF C-N THIN-FILMS PREPARED BY RADIO-FREQUENCY REACTIVE SPUTTERING
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[J]. PHYSICAL REVIEW B, 1993, 47 (16): : 10201 - 10209
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