In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy

被引:16
作者
Hiyamizu, S [1 ]
Ohno, Y
Higashiwaki, M
Shimomura, S
机构
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan
基金
日本学术振兴会;
关键词
In0.15Ga0.85As/GaAs quantum wires; (553)B GaAs; molecular beam epitaxy;
D O I
10.1016/S0022-0248(98)01449-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Self-organized In0.15Ga0.85As quantum wires (QWRs) were formed in an In0.15Ga0.85As quantum well (QW) with GaAs barrier lavers grown on a (5 5 3)B-oriented GaAs substrate by molecular beam epitaxy. The QW has a regularly corrugated interface to the upper GaAs barrier (a lateral period of about 20 nm and a vertical amplitude of about 1.5 nm) and a rather flat interface to the lower GaAs barrier. A very narrow photoluminescence peak from the QWRs was observed at a wavelength of 864 nm at 15 K. The PL peak showed strong polarization dependence [the polarization degree P = (I-parallel to - I-perpendicular to)/(I-parallel to + I-perpendicular to) = 0.25] at 15 K, indicating high one dimensionality of the (5 5 3)B QWRs. The full-width at half-maximum (FWHM) of the PL peak was as small as 8.4 meV (15 K) which is, to our knowledge, the smallest PL-FWHM reported so far for self-organized QWRs. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:824 / 827
页数:4
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