Wavelength shift of selectively oxidized AlxOy-AlGaAs-GaAs distributed Bragg reflectors

被引：25

作者：

MacDougal, MH ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] GORE PHOTON,LOMPOC,CA 93436

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期

关键词：

laser; mirrors; semiconductor growth; semiconductor-insulator interface; semiconductor lasers;

D O I：

10.1109/68.593333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of multiple oxidations on Al,O,-GaAs DBR's and AlxOy-AlGaAs-GaAs DBR's is investigated. With a compositionally graded AlGaAs layer, the oxide DBR remains stable under thermal stress, whereas without it, the DBR fractures. The stopband of the oxide DBR with the AlGaAs layer shifts when sequenced through multiple oxidation processes, which is attributed to the vertical oxidation of the AlGaAs. The resonance wavelength of a Fabry-Perot cavity containing an oxide DBR shifts 6 nm after 30 min of additional oxidation at 425 degrees C.

引用

收藏

页码：884 / 886

页数：3

相关论文

共 12 条

[1] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[2] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[3] GAIN-SWITCHING IN A VERTICAL-CAVITY LASER WITH HIGH-CONTRAST MIRRORS [J].

DENG, H ;

HUFFAKER, DL ;

SHIN, J ;

DEPPE, DG .

ELECTRONICS LETTERS, 1995, 31 (04) :278-279

[4]

Ghandhi S., 1983, VLSI FABRICATION PRI

[5] EXTREMELY WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING CHIRPED SEMICONDUCTOR/OXIDE PAIRS [J].

HUMMEL, SG ;

MACDOUGAL, MH ;

DAPKUS, PD .

ELECTRONICS LETTERS, 1995, 31 (12) :972-973

[6] PROPERTIES AND USE OF IN0.5(ALXGA1-X)0.5P AND ALXGA1-XAS NATIVE OXIDES IN HETEROSTRUCTURE LASERS [J].

KISH, FA ;

CARACCI, SJ ;

HOLONYAK, N ;

HSIEH, KC ;

BAKER, JE ;

MARANOWSKI, SA ;

SUGG, AR ;

DALLESASSE, JM ;

FLETCHER, RM ;

KUO, CP ;

OSENTOWSKI, TD ;

CRAFORD, MG .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (12) :1133-1139

[7] ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS [J].

MACDOUGAL, MH ;

DAPKUS, PD ;

PUDIKOV, V ;

ZHAO, HM ;

YANG, GM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (03) :229-231

[8] Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors [J].

MacDougal, MH ;

Yang, GM ;

Bond, AE ;

Lin, CK ;

Tishinin, D ;

Dapkus, PD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) :310-312

[9] WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING OXIDE GAAS MULTILAYERS [J].

MACDOUGAL, MH ;

ZHAO, H ;

DAPKUS, PD ;

ZIARI, M ;

STEIER, WH .

ELECTRONICS LETTERS, 1994, 30 (14) :1147-1149

[10] EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES [J].

MACDOUGAL, MH ;

HUMMEL, SG ;

DAPKUS, PD ;

ZHAO, HM ;

CHENG, Y .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :385-387