Athermal annealing of silicon

被引：17

作者：

Grun, J ^{[1
]}

Manka, CK ^{[1
]}

Hoffman, CA ^{[1
]}

Meyer, JR ^{[1
]}

Glembocki, OJ ^{[1
]}

Kaplan, R ^{[1
]}

Qadri, SB ^{[1
]}

Skelton, EF ^{[1
]}

Donnelly, D ^{[1
]}

Covington, B ^{[1
]}

机构：

[1] SAM HOUSTON STATE UNIV,DEPT PHYS,HUNTSVILLE,TX 77341

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.78.1584

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate a new mechanism for annealing silicon that does not involve the direct application of heat as in conventional thermal annealing or pulsed laser annealing. A laser purse focused to high power on a small surface spot of a neutron-transmutation-doped silicon slab is shown to anneal regions far outside the illuminated spot where no heat was directly deposited. Electrical activation of donors throughout the slab was uniform and comparable to that of thermally annealed control samples. We conjecture that the annealing was caused by mechanical energy introduced by the laser pulse. This new method may provide a viable alternative for annealing semiconductors or other materials.

引用

页码：1584 / 1587

页数：4

共 25 条

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