THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P+ POLYSILICON GATED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING

Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and g(m) instability have been found in BF2 implanted p+-polysilicon P-MOSFET's. These effects are supposed due to B-ion penetration. To prevent the B-ion penetration, RTA has been used. Experimental results show that RTA can improve the effect. But, the RTA process can also cause the generation of interface states, gate-induced-drain-leakage increase, and oxide quality degradation. All of the mechanisms of performance degradation are investigated and modeled in detail.