POLYSILICON CAPACITOR FAILURE DURING RAPID THERMAL-PROCESSING

[1] EFFECTS OF ANNEALING AND ELECTROMIGRATION ON SURFACE-MORPHOLOGY OF POLYCRYSTALLINE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2287 - 2294

[2] Daey Ouwens C., 1975, APPL PHYS LETT, V26, P569, DOI [10.1063/1.87995, DOI 10.1063/1.87995]

[3] DAI CS, 1985, APPL PHYS LETT, V46, P652

[4] HARA T, 1984, JAPAN J APPL PHYS, V23, P1452

[5] HENDRIKS M, 1982, SOLID STATE CHEM, P193

[6] HOGSON RT, 1983, P MAT RES SOC S, V13, P355

[7] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[8] RAPID ANNEALING USING HALOGEN LAMPS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1145 - 1152

[9] GRAIN-GROWTH DURING TRANSIENT ANNEALING OF AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 778 - 780

[10] MALONEY TJ, 1983, 61 VAR SEM EQ GROUP

[1] EFFECTS OF ANNEALING AND ELECTROMIGRATION ON SURFACE-MORPHOLOGY OF POLYCRYSTALLINE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2287 - 2294

[2] Daey Ouwens C., 1975, APPL PHYS LETT, V26, P569, DOI [10.1063/1.87995, DOI 10.1063/1.87995]

[3] DAI CS, 1985, APPL PHYS LETT, V46, P652

[4] HARA T, 1984, JAPAN J APPL PHYS, V23, P1452

[5] HENDRIKS M, 1982, SOLID STATE CHEM, P193

[6] HOGSON RT, 1983, P MAT RES SOC S, V13, P355

[7] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[8] RAPID ANNEALING USING HALOGEN LAMPS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1145 - 1152

[9] GRAIN-GROWTH DURING TRANSIENT ANNEALING OF AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (07) : 778 - 780

[10] MALONEY TJ, 1983, 61 VAR SEM EQ GROUP