GRAIN-GROWTH DURING TRANSIENT ANNEALING OF AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS

被引：22

作者：

KRAUSE, SJ ^{[1
]}

WILSON, SR ^{[1
]}

PAULSON, WM ^{[1
]}

GREGORY, RB ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND RES & DEV LAB,PHOENIX,AZ 85008

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：778 / 780

页数：3

共 9 条

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[2]

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[3] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

KAMINS, TI ;

MANDURAH, MM ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :927-932

[4]

MCCLEAN D, 1957, GRAIN BOUNDARIES MET

[5]

SETO JYW, 1976, J APPL PHYS, V47, P5168

[6]

Shewmon P, 2016, DIFFUSION SOLIDS, DOI [10.1007/978-3-319-48206-4, DOI 10.1007/978-3-319-48206-4]

[7] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J].

WADA, Y ;

NISHIMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1499-1504

[8] RAPID ISOTHERMAL ANNEALING OF AS-IMPLANTED, P-IMPLANTED, AND B-IMPLANTED SILICON [J].

WILSON, SR ;

PAULSON, WM ;

GREGORY, RB ;

HAMDI, AH ;

MCDANIEL, FD .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) :4162-4170

[9]

WILSON SR, 1984, PHYS LETT, V45, P464

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