RAPID ISOTHERMAL ANNEALING OF AS-IMPLANTED, P-IMPLANTED, AND B-IMPLANTED SILICON

被引：55

作者：

WILSON, SR ^{[1
]}

PAULSON, WM ^{[1
]}

GREGORY, RB ^{[1
]}

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4162 / 4170

页数：9

共 26 条

[1]

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[2]

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[3]

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[5]

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[6]

Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[7] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

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[9]

FERRIS FD, 1979, LASER SOLID INTERACT, V50

[10] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

FULKS, RT ;

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HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

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