STRESS VOLTAGE POLARITY DEPENDENCE OF THERMALLY GROWN THIN GATE OXIDE WEAROUT

被引：84

作者：

HOKARI, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1299 / 1304

页数：6

共 14 条

[1]

ANOLIC ES, 1979, APR P INT REL PHYS S, P8

[2] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[3]

CROOK DL, 1979, APR P INT REL PHYS S, P1

[4] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J].

DISTEFANO, TH ;

SHATZKES, M .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :685-687

[5] MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE [J].

FISCHETTI, MV .

PHYSICAL REVIEW B, 1985, 31 (04) :2099-2113

[6]

Hokari Y., 1982, International Electron Devices Meeting. Technical Digest, P46

[7] RELIABILITY OF 6-10 NM THERMAL SIO2-FILMS SHOWING INTRINSIC DIELECTRIC INTEGRITY [J].

HOKARI, Y ;

BABA, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2485-2491

[8] ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J].

HOLLAND, S ;

CHEN, IC ;

MA, TP ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :302-305

[9] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J].

KLEIN, N ;

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4364-4372

[10] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

← 1 2 →