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ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN
被引:75
作者
:
HOLLAND, S
论文数:
0
引用数:
0
h-index:
0
HOLLAND, S
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
MA, TP
论文数:
0
引用数:
0
h-index:
0
MA, TP
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1984年
/ 5卷
/ 08期
关键词
:
D O I
:
10.1109/EDL.1984.25925
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:302 / 305
页数:4
相关论文
共 14 条
[1]
ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS
[J].
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
AITKEN, JM
.
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(03)
:639
-650
[2]
IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DISTEFANO, TH
;
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SHATZKES, M
.
APPLIED PHYSICS LETTERS,
1974,
25
(12)
:685
-687
[3]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:527
-528
[4]
DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
[J].
HARARI, E
论文数:
0
引用数:
0
h-index:
0
HARARI, E
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2478
-2489
[5]
CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION
[J].
KLEIN, N
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
KLEIN, N
;
SOLOMON, P
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
SOLOMON, P
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
:4364
-4372
[6]
LI, 1976, SOLID STATE ELECTRON, V19, P235
[7]
HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2
[J].
NISSANCOHEN, Y
论文数:
0
引用数:
0
h-index:
0
NISSANCOHEN, Y
;
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
;
FROHMANBENTCHKOWSKY, D
论文数:
0
引用数:
0
h-index:
0
FROHMANBENTCHKOWSKY, D
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(10)
:5793
-5800
[8]
THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC
[J].
ODWYER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Southern Illinois University, Carbondale
ODWYER, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
:3887
-&
[9]
ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
;
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CHOU, NJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
:1377
-1384
[10]
SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC-BREAKDOWN ON SIO2-FILMS ON SILICON
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
;
ORMOND, DW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ORMOND, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(09)
:1195
-1198
←
1
2
→
共 14 条
[1]
ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS
[J].
AITKEN, JM
论文数:
0
引用数:
0
h-index:
0
AITKEN, JM
.
JOURNAL OF ELECTRONIC MATERIALS,
1980,
9
(03)
:639
-650
[2]
IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DISTEFANO, TH
;
SHATZKES, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SHATZKES, M
.
APPLIED PHYSICS LETTERS,
1974,
25
(12)
:685
-687
[3]
DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES
[J].
DISTEFANO, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HEIGHTS, NY 10598 USA
DISTEFANO, TH
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(01)
:527
-528
[4]
DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2
[J].
HARARI, E
论文数:
0
引用数:
0
h-index:
0
HARARI, E
.
JOURNAL OF APPLIED PHYSICS,
1978,
49
(04)
:2478
-2489
[5]
CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION
[J].
KLEIN, N
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
KLEIN, N
;
SOLOMON, P
论文数:
0
引用数:
0
h-index:
0
机构:
TECHNION ISRAEL INST TECHNOL,HAIFA,ISRAEL
SOLOMON, P
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
:4364
-4372
[6]
LI, 1976, SOLID STATE ELECTRON, V19, P235
[7]
HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2
[J].
NISSANCOHEN, Y
论文数:
0
引用数:
0
h-index:
0
NISSANCOHEN, Y
;
SHAPPIR, J
论文数:
0
引用数:
0
h-index:
0
SHAPPIR, J
;
FROHMANBENTCHKOWSKY, D
论文数:
0
引用数:
0
h-index:
0
FROHMANBENTCHKOWSKY, D
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(10)
:5793
-5800
[8]
THEORY OF HIGH FIELD CONDUCTION IN A DIELECTRIC
[J].
ODWYER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Southern Illinois University, Carbondale
ODWYER, JJ
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
:3887
-&
[9]
ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
OSBURN, CM
;
CHOU, NJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CHOU, NJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
:1377
-1384
[10]
SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC-BREAKDOWN ON SIO2-FILMS ON SILICON
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
;
ORMOND, DW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ORMOND, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(09)
:1195
-1198
←
1
2
→