ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN

被引:75
作者
HOLLAND, S
CHEN, IC
MA, TP
HU, C
机构
关键词
D O I
10.1109/EDL.1984.25925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:302 / 305
页数:4
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