ANNEALING OF RADIATION-INDUCED POSITIVE CHARGE IN MOS DEVICES WITH ALUMINUM AND POLYSILICON GATE CONTACTS

被引：18

作者：

AITKEN, JM

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 03期

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D O I：

10.1007/BF02652941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：639 / 650

页数：12

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