LOW-TEMPERATURE DIFFUSION OF AL INTO POLYCRYSTALLINE SI

[1] BELLIER SP, 1973, SEMICONDUCTOR SILICO, P304

[2] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 355 - &

[3] MAEDA K, 1971, INT ELECTRON DEVICES, P44

[4] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[5] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 573 - 577

[6] TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 277 - 280

[7] INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1278 - 1283

[8] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684

[9] NAKAMURA K, 1975, ELECTROCHEM SOC EXT, V75, P122

[1] BELLIER SP, 1973, SEMICONDUCTOR SILICO, P304

[2] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 355 - &

[3] MAEDA K, 1971, INT ELECTRON DEVICES, P44

[4] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[5] AL-SI AND AL-POLY-SI CONTACT RESISTANCE IN INTEGRATED-CIRCUITS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 573 - 577

[6] TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 277 - 280

[7] INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1278 - 1283

[8] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684

[9] NAKAMURA K, 1975, ELECTROCHEM SOC EXT, V75, P122