INTERACTION OF METAL LAYERS WITH POLYCRYSTALLINE SI

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[3] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[4] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[5] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 645 - 651

[6] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[8] ATOM MOVEMENTS OCCURRING AT SOLID METAL-SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 990 - 995

[9] NAKAMURA K, TO BE PUBLISHED

[10] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1. [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1730 - 1739

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[3] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &

[4] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[5] ALLOYING OF THIN PALLADIUM FILMS WITH SINGLE-CRYSTAL AND AMORPHOUS SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (02): : 645 - 651

[6] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[8] ATOM MOVEMENTS OCCURRING AT SOLID METAL-SEMICONDUCTOR INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06): : 990 - 995

[9] NAKAMURA K, TO BE PUBLISHED

[10] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1. [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1730 - 1739