TI AND V LAYERS RETARD INTERACTION BETWEEN AL FILMS AND POLYCRYSTALLINE SI

被引：56

作者：

NAKAMURA, K ^{[1
]}

LAU, SS ^{[1
]}

NICOLET, MA ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 05期

关键词：

D O I：

10.1063/1.88734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：277 / 280

页数：4

共 7 条

[1]

BELLIER SP, 1973, SEMICONDUCTOR SILICO, P304

[2]

BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[3] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].

BOWER, RW ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&

[4] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].

KRAUTLE, H ;

NICOLET, MA ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3304-3308

[5]

Krautle H., 1974, APPL ION BEAMS METAL, P193

[6] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J].

NAKAMURA, K ;

NICOLET, MA ;

MAYER, JW ;

BLATTNER, RJ ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) :4678-4684

[7] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J].

TU, KN ;

ZIEGLER, JF ;

KIRCHER, CJ .

APPLIED PHYSICS LETTERS, 1973, 23 (09) :493-495

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