RELIABILITY OF 6-10 NM THERMAL SIO2-FILMS SHOWING INTRINSIC DIELECTRIC INTEGRITY

被引：40

作者：

HOKARI, Y ^{[1
]}

BABA, T ^{[1
]}

KAWAMURA, N ^{[1
]}

机构：

[1] NEC CORP,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI 213,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期

关键词：

D O I：

10.1109/T-ED.1985.22299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2485 / 2491

页数：7

共 14 条

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[7] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

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[8]

HOKARI Y, 1982, DEC IEDM, P46

[9] TIME-DEPENDENT MOS BREAKDOWN [J].

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BATES, ET ;

MASERJIAN, J .

SOLID-STATE ELECTRONICS, 1976, 19 (03) :235-239

[10]

MANN NR, 1974, METHODS STATISTICAL

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