TIME-DEPENDENT MOS BREAKDOWN

被引：18

作者：

LI, SP ^{[1
]}

BATES, ET ^{[1
]}

MASERJIAN, J ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 03期

关键词：

D O I：

10.1016/0038-1101(76)90168-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 239

页数：5

共 13 条

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[2]

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[3]

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[4]

LI SP, 1974, J MICROELECTRON REL, V13, P209

[5]

LI SP, 1975, SOLID ST ELECTRON, V18, P297

[6] TUNNELING THROUGH THIN MOS STRUCTURES - DEPENDENCE ON ENERGY (E-K) [J].

MASERJIAN, J ;

PETERSSON, GP .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :50-52

[7] IMPROVED DIELECTRIC RELIABILITY OF SIO2-FILMS WITH POLYCRYSTALLINE SILICON ELECTRODES [J].

OSBURN, CM ;

BASSOUS, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) :89-92

[8] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J].

OSBURN, CM ;

CHOU, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1377-1384

[9] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON [J].

OSBURN, CM ;

RAIDER, SI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) :1369-1376

[10] SODIUM-INDUCED BARRIER-HEIGHT LOWERING AND DIELECTRIC-BREAKDOWN ON SIO2-FILMS ON SILICON [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1195-1198

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