TUNNELING THROUGH THIN MOS STRUCTURES - DEPENDENCE ON ENERGY (E-K)

被引：56

作者：

MASERJIAN, J ^{[1
]}

PETERSSON, GP ^{[1
]}

机构：

[1] CALTECH, JET PROP LAB, PASADENA, CA 91103 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1063/1.1655275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：50 / 52

页数：3

共 10 条

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[7]

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[8] SATURATION CAPACITANCE OF THIN OXIDE MOS STRUCTURES AND EFFECTIVE SURFACE DENSITY OF STATES OF SILICON [J].

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PETERSSO.G ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :335-339

[9] TUNNELING IN MIS STRUCTURES .I. THEORY [J].

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WARFIELD, G .

SOLID-STATE ELECTRONICS, 1967, 10 (12) :1165-&

[10] EFFECT OF NONPARABOLIC ENERGY BANDS ON TUNNELING THROUGH THIN INSULATING FILMS [J].

STRATTON, R ;

LEWICKI, G ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1599-&

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