TUNNELING IN MIS STRUCTURES .I. THEORY

[1] BORKAN H, 1963, RCA REV, V24, P153

[2] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[3] GOODMAN AM, 1966, PHYS REV, V144, pA588

[4] TUNNELING FROM METAL TO SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1965, 140 (1A): : A179 - +

[5] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[6] HEIMAN FP, 1964, THESIS PRINCETON U

[7] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +

[8] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114

[1] BORKAN H, 1963, RCA REV, V24, P153

[2] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (24) : 1108 - &

[3] GOODMAN AM, 1966, PHYS REV, V144, pA588

[4] TUNNELING FROM METAL TO SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1965, 140 (1A): : A179 - +

[5] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J]. PHYSICAL REVIEW, 1961, 123 (01): : 85 - &

[6] HEIMAN FP, 1964, THESIS PRINCETON U

[7] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 321 - +

[8] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[10] REVIEW OF GERMANIUM SURFACE PHENOMENA [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 101 - 114